Researchers at the University of Toronto, led by Dr. Amr S. Helmy, have developed a new method for integrating electro-optic SiO 2 /ITO heterointerfaces into metal–insulator–semiconductor (MIS) ...
Two distinct structures have been developed for the enhancement mode of GaN-based high-electron–mobility transistors (HEMTs). These two modes are the metal-insulator–semiconductor (MIS) structure, 2 ...
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