Abstract: We demonstrated 3D vertical Gate-All-Around (GAA) vertical-channel FeFET using ferroelectric (FE) Zr-doped HfO 2 (HZO) and indium-gallium oxide (IGO) channel. Subthreshold swing of 90 mV/dec ...
From 22 January to 2 March 2026 Trevor Anthes, Harry Kinnard and Myles Moser made the first ascent of 'Paradigm Shift' on the ...